Silicon Carbide Film Growth Using Dual Isotopical <SUP>28</SUP>Si<SUP>&minus;</SUP> and <SUP>12</SUP>C<SUP>+</SUP> Ion Species

Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge-discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carb...

Growth of 3C-Silicon Carbide Nanowires using Chemical Vapor Deposition

The focus of this project was the characterization and growth of 3C-silicon carbide (b-SiC) nanowires using the vapor-liquid-solid method. Chemical vapor deposition (CVD) occurred at temperatures ranging from 1050oC to 1100oC using silane and propane as precursor gases. Experimentation with various surface preparations, including metal catalysts such as nickel (Ni) and aluminum (Al) deposited b...

Silicon Carbide in Microsystem Technology — Thin Film Versus Bulk Material

This chapter looks at the role of silicon carbide (SiC) in microsystem technology. It starts with an introduction into the wide bandgap (WBG) materials and the properties that make them potential candidates to enable the development of harsh environment microsystems. The future commercial success of WBG microsystems depends mainly on the availability of high-quality materials, well-established ...

Silicon Nitride and Silicon Carbide

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

The etching of Si, SiO2 , Si3N4 , and SiCH in fluorocarbon plasmas is accompanied by the formation of a thin steady-state fluorocarbon film at the substrate surface. The thickness of this film and the substrate etch rate have often been related. In the present work, this film has been characterized for a wide range of processing conditions in a high-density plasma reactor. It was found that the...